august 1998 6-39 MIC94002 micrel 6 MIC94002 dual p-channel mosfet not recommended for new designs features ? 15v minimum drain-to-source breakdown ? 0.4 w maximum on-resistance at 4.5v gate-to-source voltage (each mosfet) ? functional at 2.7v gate-to-source voltage ? 0.063" maximum height applications ? high-side switch ? power management ? stepper motor control ? 1.8" pcmcia disk drive v cc switch ordering information part number temperature range* package MIC94002blm C55 c to +150 c 8-lead soic ? * operating junction temperature ? low profile leads, see package information package information 45 3 ? 0.244 (6.20) 0.228 (5.80) 0.197 (5.0) 0.189 (4.8) 0.063 (1.60) max seating plane 0.026 (0.65) max ) 0.016 (0.40) typ 0.154 (3.90) 0.057 (1.45) 0.049 (1.25) 0.193 (4.90) 0.050 (1.27) typ pin 1 typical application load 1 +5v on off 74hc04 on off 1/2 MIC94002 1/2 MIC94002 g1 g2 d1 d2 s s common source load 2 dual power switch application general description the MIC94002 contains two silicon gate p-channel mosfets designed for low on-resistance, high-side switch applica- tions. the MIC94002 has a maximum on-resistance of 0.4 w at 4.5v gate-to-source voltage. on-resistance can also be reduced to half by connecting both mosfets in parallel. improved esd protection is provided by the gate protection network shown in the schematic diagram. the MIC94002 is supplied in a low-profile version of the 8-lead soic package. the MIC94002 can be assembled with the body not shorted to the sources for use in analog switch applications. contact the factory for more information. 1 2 3 4 8 7 6 5 d1 d1 d2 d2 s g1 s g2 8-lead low-profile soic package (lm) pin configuration schematic information schematic symbols gate 1 source drain 1 drain 2 gate 2 schematic diagram g1 s g2 d1 d2 s patent 5,355,008
MIC94002 micrel 6-40 august 1998 electrical characteristics note 1 t a = 25 c unless noted. all values are negative. signs not shown for clarity. symbol parameter condition min typ max units v bdss drain-source breakdown voltage v gs = 0v, i d = 250 m a15v v gs gate threshold voltage v ds = v gs , i d = 250 m a13v i gss gate-body leakage v ds = 0v, v gs = 15v, note 3 100 na i dss zero gate voltage drain current v ds = 15v, v gs = 0v 25 m a v ds = 15v, v gs = 0v, t j = 125 c 250 m a i d(on) on-state drain current v ds 3 10v, v gs = 10v, note 2 5.5 a r ds(on) drain-source on-state resist. v gs = 4.5v, i d = 50ma 0.35 0.40 w g fs forward transconductance v ds = 15v, i d = 1a, note 2 0.7 s note 1 values for each mosfet note 2 pulse test: pulse width 300 m s, duty cycle 2% note 3 esd gate protection diode conducts during positive gate-to-source voltage excursions. absolute maximum ratings voltage and current values are negative. signs not shown for clarity. drain-to-source voltage ................................................ 15v gate-to-source voltage ................................................ 15v continuous drain current (each mosfet, both on) t a = 25 c ................................................................. 1.2a t a = 100 c ............................................................... 0.7a operating juction temperature ................. C55 c to +150 storage temperature ............................... C55 c to +150 c total power dissipation t a = 25 c ................................................................... 1w t a = 100 c .............................................................. 0.4w thermal resistance q ja ...................................................................................... 125 c/w q jc ........................................................................................ 76 c/w lead temperature 1/16 " from case, 10s ........................................... +300 c 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.0 0.4 0.8 1.2 1.6 2.0 r ds(on) ( w ) i d (a) on resistance vs. drain current v gs = 4.5v v gs = 10v notes 1, 2 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0.0 2.5 5.0 7.5 10.0 12.5 15.0 i d (ma) v ds (v) drain characteristics v gs = 4.0 v gs = 3.5 v gs = 3.0 v gs = 2.5 v gs = 2.0 v gs = 1.5 notes 1, 2 typical characteristics
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